The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2025

Filed:

Aug. 15, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;

Inventors:

Watson Liu, Hsinchu, TW;

Fu-Ting Sung, Yangmei, TW;

Hsia-Wei Chen, Taipei, TW;

Yu-Wen Liao, New Taipei, TW;

Wen-Ting Chu, Kaohsiung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/828 (2023.02); H10B 63/30 (2023.02); H10B 63/80 (2023.02); H10N 70/041 (2023.02); H10N 70/063 (2023.02); H10N 70/24 (2023.02);
Abstract

A semiconductor structure includes a first electrode comprising a first metallic material; a memory film including at least one dielectric metal oxide material and contacting the first electrode; and a second electrode comprising a second metallic material and contacting the memory film. The memory film includes a center region having a first average atomic ratio of a passivation element to oxygen that is less than 0.01, and includes a peripheral region having a second average atomic ratio of the passivation element to oxygen that is greater than 0.05.


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