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Hsia-Wei Chen

This inventor holds 96 USPTO granted patents and 13 published patent applications, primarily in Resistive Memory Devices (CPC class H01L45-146). Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2014-2026.

USPTO Granted Patents = 96 (Patent Applications = 13)

% Patents Active = 89.6

Average Co-Inventor Count = 5.6

ph-index = 13

Forward Citations = 414(Granted Patents)

Forward Citations (Not Self Cited) = 357(Dec 10, 2025)

Inventors with similar research interests:

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Location History:

Hsin-Chu, TW (2016)
Taipei, TW (2014 - 2024)

Company Filing History:

96 out of 42,711

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2014-2026

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Areas of Expertise:

Resistive Memory

RRAM Technology

Memory Cells

Integrated Circuit

Circuit Design

Threshold Voltage

Dielectric Structure

Embedded Memory

Semiconductor Device

Electrode Structure

Asymmetric Source

Variable-Capacitance

96 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12610749 - Method of forming a resistive memory device with ultra-thin barrier layer (2026-04-21),

2. 12588429 - Resistive memory device including a silicon oxide base spacer and methods for forming the same (2026-03-24),

3. 12507602 - RRAM with post-patterned treated memory films to provide improved endurance characteristics and methods for forming (2025-12-23),

4. 12424256 - Circuit design and layout with high embedded memory density (2025-09-23),

5. 12336442 - Memory device with bottom electrode (2025-06-17),

6. 12310036 - Threshold voltage-modulated memory device using variable-capacitance and methods of forming the same (2025-05-20),

7. 12232336 - Threshold voltage-modulated memory device using variable-capacitance and methods of forming the same (2025-02-18),

8. 12218005 - Integrated circuit device (2025-02-04),

9. 12075636 - Threshold voltage-modulated memory device using variable-capacitance and methods of forming the same (2024-08-27),

10. 11980041 - Method to form memory cells separated by a void-free dielectric structure (2024-05-07),

11. 11961545 - Circuit design and layout with high embedded memory density (2024-04-16),

12. 11894267 - Method for fabricating integrated circuit device (2024-02-06),

13. 11889705 - Interconnect landing method for RRAM technology (2024-01-30),

14. 11856801 - Threshold voltage-modulated memory device using variable-capacitance and methods of forming the same (2023-12-26),

15. 11856797 - Resistive switching random access memory with asymmetric source and drain (2023-12-26),

Title: The Innovative Journey of Hsia-Wei Chen

Introduction: Hsia-Wei Chen, a pioneering inventor hailing from Taipei, TW, has made significant contributions to the field of technology with her groundbreaking innovations.

Latest Patents: Chen's latest patents focus on advancements in renewable energy technologies, particularly in the development of solar-powered devices for sustainable living.

Career Highlights: With a career spanning over two decades, Chen has established herself as a leading figure in the tech industry, holding numerous patents in the areas of clean energy, smart devices, and environmental conservation.

Collaborations: Throughout her career, Chen has collaborated with top research institutions and universities worldwide to further her research and bring her innovative ideas to life. Her partnerships have led to the creation of cutting-edge technologies that have revolutionized the way we approach sustainability.

Conclusion: Hsia-Wei Chen's relentless pursuit of innovation and commitment to creating a more sustainable future have solidified her position as a trailblazer in the world of technology. Her work continues to inspire and drive positive change in the industry and beyond.

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