The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2026

Filed:

Apr. 20, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;

Inventors:

Fu-Ting Sung, Yangmei City, TW;

Jhih-Bin Chen, Hsinchu, TW;

Hung-Shu Huang, Taichung City, TW;

Hong Ming Liu, Hsinchu City, TW;

Hsia-Wei Chen, Taipei City, TW;

Yu-Wen Liao, New Taipei City, TW;

Wen-Ting Chu, Kaohsiung City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/841 (2023.02); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H10B 63/34 (2023.02); H10N 70/063 (2023.02); H10N 70/253 (2023.02); H10N 70/826 (2023.02);
Abstract

A semiconductor structure includes: an etch-stop dielectric layer overlying a substrate and including a first opening therethrough; a silicon oxide plate overlying the etch-stop dielectric layer and including a second opening therethrough; a first conductive structure including a first electrode and extending through the second opening and the first opening; a memory film contacting a top surface of the first conductive structure and including a material that provides at least two resistive states having different electrical resistivity; and a second conductive structure including a second electrode and contacting a top surface of the memory film.


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