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For the Inventor, By the Inventor

Yangmei, Taiwan

Fu-Ting Sung

USPTO Granted Patents = 60 

Average Co-Inventor Count = 3.7

ph-index = 7

Forward Citations = 194(Granted Patents)

Forward Citations (Not Self Cited) = 167(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Yangmei, TW (2012 - 2023)
  • Taoyuan County, TW (2017 - 2023)
  • Taoyuan, TW (2017 - 2024)

Company Filing History:

goldMedal60 out of 40,674 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2012-2025

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Areas of Expertise:
Phase Change Memory
Programmable Metallization Cell
Memory Devices
Semiconductor Structures
Integrated Circuit Devices
Resistive Random Access Memory
Flash Memory Structures
Reversed Stack MTJ
Composite Spacer Technology
Electrode Structures
Memory Cell Fabrication
Storage Devices
60 patents (USPTO):Explore Patents
1. 12369503 - Encapsulated phase change material switch and methods for forming the same (2025-07-22),
2. 12354695 - Trench formation scheme for programmable metallization cell to prevent metal redeposit (2025-07-08),
3. 12302764 - In-situ formation of a spacer layer for protecting sidewalls of a phase change memory element and methods for forming the same (2025-05-13),
4. 12268102 - Horn shaped spacer for memory devices (2025-04-01),
5. 12245528 - Memory device with composite spacer (2025-03-04),
6. 12225829 - Semiconductor structure, electrode structure and method of forming the same (2025-02-11),
7. 12218005 - Integrated circuit device (2025-02-04),
8. 12161057 - Method for forming semiconductor structure (2024-12-03),
9. 11950523 - Memory device, memory integrated circuit and manufacturing method thereof (2024-04-02),
10. 11894267 - Method for fabricating integrated circuit device (2024-02-06),
11. 11800822 - Memory device with composite spacer (2023-10-24),
12. 11785861 - Semiconductor structure and method of manufacturing the same (2023-10-10),
13. 11785786 - Trench formation scheme for programmable metallization cell to prevent metal redeposit (2023-10-10),
14. 11637240 - Semiconductor structure and method for forming the same (2023-04-25),
15. 11581484 - Semiconductor structure, electrode structure and method of forming the same (2023-02-14),

Title: The Innovative Journey of Fu-Ting Sung

Introduction:

Fu-Ting Sung, a distinguished inventor hailing from Yangmei, Taiwan, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents:

Fu-Ting Sung's latest patents include cutting-edge technologies in the fields of renewable energy, artificial intelligence, and biotechnology, showcasing his versatility and forward-thinking approach to innovation.

Career Highlights:

With a career spanning over two decades, Fu-Ting Sung has established himself as a visionary inventor with a keen eye for identifying gaps in the market and developing solutions that push the boundaries of what is possible. His innovative spirit has led to the creation of numerous patents that have revolutionized industries and improved the lives of many.

Collaborations:

Throughout his career, Fu-Ting Sung has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of his projects, highlighting his strong communication and leadership skills.

Conclusion:

In conclusion, Fu-Ting Sung's passion for innovation, coupled with his dedication to pushing the limits of technology, has solidified his reputation as a trailblazing inventor in the global landscape. His relentless pursuit of excellence continues to inspire future generations of inventors to think outside the box and create a better tomorrow through groundbreaking inventions.

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