The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2026
Filed:
Jan. 31, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Fu-Ting Sung, Yangmei City, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A cell structure of a memory device includes an upper electrode structure separated from a metal line above the cell structure by a combination of one or more layers including an isolation layer. The cell structure may be patterned using a metal line below the cell structure as an etch-stop layer. Relative to other techniques that include patterning the cell structure using a silicon carbide layer located over the metal line below the cell structure as an etch-stop layer, the techniques described herein may reduce an overall height of the memory structure. Additionally, or alternatively, the techniques may maintain or increase an isolation distance between the metal line above the cell structure and the upper electrode structure. In this way, a likelihood of shorting between the metal line above the cell structure and the upper electrode structure is reduced to improve a performance and/or a reliability of the memory device.