The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2025
Filed:
Jul. 31, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/20 (2023.01); H10N 50/01 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/24 (2023.02); H10N 50/01 (2023.02); H10N 70/011 (2023.02); H10N 70/063 (2023.02); H10N 70/20 (2023.02); H10N 70/801 (2023.02); H10N 70/826 (2023.02);
Abstract
A memory device includes a first metal structure, a magnetic tunnel junction (MTJ) structure, a second metal structure, a first spacer, and a second spacer. The MTJ structure is over the first metal structure. The second metal structure is over the MTJ structure. The first spacer is over a first sidewall of the second metal structure. The second spacer is over a second sidewall of the second metal structure. The second spacer has a top surface higher than a top surface of the first spacer.