In-situ formation of a spacer layer for protecting sidewalls of a phase change memory element and methods for forming the same

Abstract

An embodiment phase-change memory device includes a first electrode formed over an interconnect layer, a phase-change memory element formed over the first electrode, a second electrode formed over the phase-change memory element, and an oxygen-free spacer layer formed over sidewalls of the phase-change memory element. The phase-change memory element may include a germanium-antimony-tellurium alloy or an aluminum-antimony alloy. The phase-change memory device may include a carbon layer, configured as a heater element, formed between the first electrode and the phase-change memory element. The oxygen-free spacer layer may include SiN, SiC, or SiCN and may further include chlorine, fluorine, argon, chlorine and argon, fluorine and argon, or a mixture of chlorine, fluorine, and argon. The oxygen-free spacer layer may further include a composition that varies with position within the oxygen-free spacer layer. A further embodiment includes the phase-change memory device coupled to a selector element within a phase-change random-access memory structure.