The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2026
Filed:
Jan. 06, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tsung-Hsueh Yang, Taichung City, TW;
Chang-Chih Huang, Taichung, TW;
Yu-Wen Wang, Taichung City, TW;
Fu-Ting Sung, Yangmei City, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A memory device including a first electrode and a second electrode are over a first dielectric layer. A heater layer is laterally between the first electrode and the second electrode. A thermal transfer layer is over the heater layer. The thermal transfer layer includes a first tapered region between the first electrode and the heater layer. A phase-change layer is over the thermal transfer layer and extends laterally from a top surface of the first electrode to a top surface of the second electrode. The phase-change layer includes a first lateral region over the first electrode and a first step region directly over the first tapered region of the thermal transfer layer. The phase-change layer has a first thickness along the first step region and a second thickness along the first lateral region. A difference between the first thickness and the second thickness is less than 20%.