The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2025

Filed:

Jan. 25, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Hsia-Wei Chen, Taipei, TW;

Fu-Ting Sung, Taoyuan, TW;

Yu-Wen Liao, New Taipei, TW;

Wen-Ting Chu, Kaohsiung, TW;

Fa-Shen Jiang, Taoyuan, TW;

Tzu-Hsuan Yeh, Taoyuan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76877 (2013.01); H01L 21/76802 (2013.01); H01L 21/76832 (2013.01); H01L 23/528 (2013.01); H01L 23/53209 (2013.01);
Abstract

An integrated circuit device includes an interconnect layer, a memory structure, a third conductive feature, and a fourth conductive feature. The interconnect layer includes a first conductive feature and a second conductive feature. The memory structure is over and in contact with the first conductive feature. The memory structure includes at least a resistance switching element over the first conductive feature. The third conductive feature, including a first conductive line, is over and in contact with the second conductive feature. The fourth conductive feature is over and in contact with the memory structure. The fourth conductive feature includes a second conductive line, a top surface of the first conductive line is substantially level with a top surface of the second conductive line, and a bottom surface of the first conductive line is lower than a bottommost portion of a bottom surface of the second conductive line.


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