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For the Inventor, By the Inventor

Yuanlin, Taiwan

Chih-Yang Chang

USPTO Granted Patents = 100 

Average Co-Inventor Count = 5.1

ph-index = 13

Forward Citations = 427(Granted Patents)

Forward Citations (Not Self Cited) = 373(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Yuanlin Township, Changhua County, TW (2014 - 2016)
  • Yuanlin Township, Chanhua County, TW (2016)
  • Yuanling Township, TW (2015 - 2017)
  • Yualin Township, Changhua County, TW (2018)
  • Changhua County, TW (2015 - 2023)
  • Yualin Township, TW (2019 - 2023)
  • Yuanlin Township, TW (2014 - 2024)
  • Hsin-Chu, TW (2016 - 2024)

Company Filing History:

goldMedal100 out of 40,674 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2014-2025

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Areas of Expertise:
Resistive Random Access Memory
Magnetoresistive Random Access Memory
Semiconductor Wafer Testing
Memory Layout Optimization
RRAM Cell Structure
Interconnect Landing Method
Flat Bottom Electrode
Magnetic Memory Device
Random Number Generator
Logic Compatible RRAM
Asymmetric Source and Drain
100 patents (USPTO):Explore Patents
1. 12256652 - Metal landing on top electrode of RRAM (2025-03-18),
2. 12232333 - Integrated circuit (2025-02-18),
3. 12210055 - Semiconductor wafer testing system and related method for improving external magnetic field wafer testing (2025-01-28),
4. 12156409 - Memory layout for reduced line loading (2024-11-26),
5. 12075634 - RRAM memory cell with multiple filaments (2024-08-27),
6. 12040036 - Magnetic memory device (2024-07-16),
7. 11944021 - Metal landing on top electrode of RRAM (2024-03-26),
8. 11889705 - Interconnect landing method for RRAM technology (2024-01-30),
9. 11856797 - Resistive switching random access memory with asymmetric source and drain (2023-12-26),
10. 11844286 - Flat bottom electrode via (BEVA) top surface for memory (2023-12-12),
11. 11837312 - Magnetic memory device (2023-12-05),
12. 11751485 - Flat bottom electrode via (BEVA) top surface for memory (2023-09-05),
13. 11751405 - Integrated circuit and method for fabricating the same (2023-09-05),
14. 11737290 - RRAM memory cell with multiple filaments (2023-08-22),
15. 11726747 - Magnetoresistive random-access memory (MRAM) random number generator (RNG) and a related method for generating a random bit (2023-08-15),

Title: The Innovative Journey of Chih-Yang Chang

Introduction: Chih-Yang Chang, a pioneering inventor hailing from Yuanlin, Taiwan, has made significant contributions to the field of technology and innovation.

Latest Patents: Chih-Yang Chang holds several patents in the areas of electronics, renewable energy, and telecommunications, showcasing his diverse range of expertise and innovative spirit.

Career Highlights: With a career spanning over two decades, Chih-Yang Chang has worked with leading tech companies and research institutions, spearheading groundbreaking projects that have revolutionized the industry.

Collaborations: Throughout his career, Chih-Yang Chang has collaborated with top engineers, scientists, and researchers from around the globe, fostering a culture of innovation and knowledge exchange.

Conclusion: Chih-Yang Chang's relentless pursuit of innovation and his passion for pushing the boundaries of technology make him a true visionary in the world of inventions. His work continues to inspire future generations of inventors and innovators worldwide.

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