logo

For the Inventor, By the Inventor

Yuanlin, Taiwan

Chih-Yang Chang

This inventor holds 101 USPTO granted patents and 2 published patent applications, primarily in RRAM Technology (CPC class H01L45-146). Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2014-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chih-Yang Chang. Retrieved from https://idiyas.com/inventor/chih-yang-chang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 101 

% Patents Active = 88.1

Average Co-Inventor Count = 5.1

ph-index = 13

Forward Citations = 437(Granted Patents)

Forward Citations (Not Self Cited) = 373(Dec 10, 2025)


Inventors with similar research interests:

🔬 See more inventors

Location History:

  • Yuanlin Township, Changhua County, TW (2014 - 2016)
  • Yuanlin Township, Chanhua County, TW (2016)
  • Yuanling Township, TW (2015 - 2017)
  • Yualin Township, Changhua County, TW (2018)
  • Changhua County, TW (2015 - 2023)
  • Yualin Township, TW (2019 - 2023)
  • Yuanlin Township, TW (2014 - 2024)
  • Hsin-Chu, TW (2016 - 2024)

Company Filing History:

goldMedal101 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2014-2026

Loading Chart...
Areas of Expertise:
RRAM Memory Cell
Magnetic Memory Device
Semiconductor Testing
Resistive Switching
Interconnect Method
Memory Layout
Filament Structures
Magnetoresistive RAM
Top Electrode Design
Wafer Testing
Asymmetric Source Drain
101 patents (USPTO):Explore Patents
1. 12700473 - Magnetic memory device (2026-08-04),
2. 12256652 - Metal landing on top electrode of RRAM (2025-03-18),
3. 12232333 - Integrated circuit (2025-02-18),
4. 12210055 - Semiconductor wafer testing system and related method for improving external magnetic field wafer testing (2025-01-28),
5. 12156409 - Memory layout for reduced line loading (2024-11-26),
6. 12075634 - RRAM memory cell with multiple filaments (2024-08-27),
7. 12040036 - Magnetic memory device (2024-07-16),
8. 11944021 - Metal landing on top electrode of RRAM (2024-03-26),
9. 11889705 - Interconnect landing method for RRAM technology (2024-01-30),
10. 11856797 - Resistive switching random access memory with asymmetric source and drain (2023-12-26),
11. 11844286 - Flat bottom electrode via (BEVA) top surface for memory (2023-12-12),
12. 11837312 - Magnetic memory device (2023-12-05),
13. 11751485 - Flat bottom electrode via (BEVA) top surface for memory (2023-09-05),
14. 11751405 - Integrated circuit and method for fabricating the same (2023-09-05),
15. 11737290 - RRAM memory cell with multiple filaments (2023-08-22),

Title: The Innovative Journey of Chih-Yang Chang

Introduction: Chih-Yang Chang, a pioneering inventor hailing from Yuanlin, Taiwan, has made significant contributions to the field of technology and innovation.

Latest Patents: Chih-Yang Chang holds several patents in the areas of electronics, renewable energy, and telecommunications, showcasing his diverse range of expertise and innovative spirit.

Career Highlights: With a career spanning over two decades, Chih-Yang Chang has worked with leading tech companies and research institutions, spearheading groundbreaking projects that have revolutionized the industry.

Collaborations: Throughout his career, Chih-Yang Chang has collaborated with top engineers, scientists, and researchers from around the globe, fostering a culture of innovation and knowledge exchange.

Conclusion: Chih-Yang Chang's relentless pursuit of innovation and his passion for pushing the boundaries of technology make him a true visionary in the world of inventions. His work continues to inspire future generations of inventors and innovators worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…