Chih-Yang Chang

This inventor holds 101 USPTO granted patents and 2 published patent applications, primarily in RRAM Technology (CPC class H01L45-146). Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2014-2026.

USPTO Granted Patents = 101 (Patent Applications = 2)

% Patents Active = 88.1

Average Co-Inventor Count = 5.1

ph-index = 13

Forward Citations = 437(Granted Patents)

Forward Citations (Not Self Cited) = 373(Dec 10, 2025)

Inventors with similar research interests:

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Location History:

Yuanlin Township, Changhua County, TW (2014 - 2016)
Yuanlin Township, Chanhua County, TW (2016)
Yuanling Township, TW (2015 - 2017)
Yualin Township, Changhua County, TW (2018)
Changhua County, TW (2015 - 2023)
Yualin Township, TW (2019 - 2023)
Yuanlin Township, TW (2014 - 2024)
Hsin-Chu, TW (2016 - 2024)

Company Filing History:

101 out of 42,711

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2014-2026

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Areas of Expertise:

RRAM Memory Cell

Magnetic Memory Device

Semiconductor Testing

Resistive Switching

Interconnect Method

Memory Layout

Filament Structures

Magnetoresistive RAM

Top Electrode Design

Wafer Testing

Asymmetric Source Drain

101 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12700473 - Magnetic memory device (2026-08-04),

2. 12256652 - Metal landing on top electrode of RRAM (2025-03-18),

3. 12232333 - Integrated circuit (2025-02-18),

4. 12210055 - Semiconductor wafer testing system and related method for improving external magnetic field wafer testing (2025-01-28),

5. 12156409 - Memory layout for reduced line loading (2024-11-26),

6. 12075634 - RRAM memory cell with multiple filaments (2024-08-27),

7. 12040036 - Magnetic memory device (2024-07-16),

8. 11944021 - Metal landing on top electrode of RRAM (2024-03-26),

9. 11889705 - Interconnect landing method for RRAM technology (2024-01-30),

10. 11856797 - Resistive switching random access memory with asymmetric source and drain (2023-12-26),

11. 11844286 - Flat bottom electrode via (BEVA) top surface for memory (2023-12-12),

12. 11837312 - Magnetic memory device (2023-12-05),

13. 11751485 - Flat bottom electrode via (BEVA) top surface for memory (2023-09-05),

14. 11751405 - Integrated circuit and method for fabricating the same (2023-09-05),

15. 11737290 - RRAM memory cell with multiple filaments (2023-08-22),

Title: The Innovative Journey of Chih-Yang Chang

Introduction: Chih-Yang Chang, a pioneering inventor hailing from Yuanlin, Taiwan, has made significant contributions to the field of technology and innovation.

Latest Patents: Chih-Yang Chang holds several patents in the areas of electronics, renewable energy, and telecommunications, showcasing his diverse range of expertise and innovative spirit.

Career Highlights: With a career spanning over two decades, Chih-Yang Chang has worked with leading tech companies and research institutions, spearheading groundbreaking projects that have revolutionized the industry.

Collaborations: Throughout his career, Chih-Yang Chang has collaborated with top engineers, scientists, and researchers from around the globe, fostering a culture of innovation and knowledge exchange.

Conclusion: Chih-Yang Chang's relentless pursuit of innovation and his passion for pushing the boundaries of technology make him a true visionary in the world of inventions. His work continues to inspire future generations of inventors and innovators worldwide.