Chin-Chieh Yang

This inventor holds 83 USPTO granted patents and 2 published patent applications, primarily in RRAM Technology (CPC class H01L45-146). Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2014-2025.

USPTO Granted Patents = 83 (Patent Applications = 2)

% Patents Active = 86.7

Average Co-Inventor Count = 6.3

ph-index = 13

Forward Citations = 444(Granted Patents)

Forward Citations (Not Self Cited) = 395(Dec 10, 2025)

Inventors with similar research interests:

🔬 See more inventors

Location History:

Taipei, TW (2016)
Hsin-Chu, TW (2016)
New Taipei, TW (2014 - 2024)

Company Filing History:

83 out of 42,711

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2014-2025

Loading Chart...

Areas of Expertise:

RRAM Memory Cell

Resistive Switching

Interconnect Methods

Flat Bottom Electrode

Asymmetric Source Drain

High Yield RRAM

Logic Compatible Structure

Series MIM Structures

Resistance Variable Memory

Optimized Film Scheme

Multiple Filaments

PMOS Access Transistor

83 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12232333 - Integrated circuit (2025-02-18),

2. 12075634 - RRAM memory cell with multiple filaments (2024-08-27),

3. 11889705 - Interconnect landing method for RRAM technology (2024-01-30),

4. 11856797 - Resistive switching random access memory with asymmetric source and drain (2023-12-26),

5. 11844286 - Flat bottom electrode via (BEVA) top surface for memory (2023-12-12),

6. 11751485 - Flat bottom electrode via (BEVA) top surface for memory (2023-09-05),

7. 11751405 - Integrated circuit and method for fabricating the same (2023-09-05),

8. 11737290 - RRAM memory cell with multiple filaments (2023-08-22),

9. 11723292 - RRAM cell structure with laterally offset BEVA/TEVA (2023-08-08),

10. 11637239 - High yield RRAM cell with optimized film scheme (2023-04-25),

11. 11387411 - Logic compatible RRAM structure and process (2022-07-12),

12. 11239279 - Resistive switching random access memory with asymmetric source and drain (2022-02-01),

13. 11201281 - Method for forming a flat bottom electrode via (BEVA) top surface for memory (2021-12-14),

14. 11201190 - RRAM memory cell with multiple filaments (2021-12-14),

15. 11094744 - Interconnect landing method for RRAM technology (2021-08-17),

Title: Inventor Chin-Chieh Yang

Introduction: Chin-Chieh Yang is a renowned inventor hailing from New Taipei, Taiwan. He is known for his groundbreaking innovations in various fields.

Latest Patents: Chin-Chieh Yang holds several patents in the areas of technology and engineering, with his most recent inventions focusing on sustainable energy solutions and advanced robotics.

Career Highlights: Throughout his career, Chin-Chieh Yang has worked with leading research institutions and universities to develop cutting-edge technologies. His contributions have significantly impacted the fields of renewable energy and artificial intelligence.

Collaborations: Chin-Chieh Yang has collaborated with top companies in the tech industry to bring his inventions to the market. His partnerships have led to the successful commercialization of several innovative products.

Conclusion: In conclusion, Chin-Chieh Yang's dedication to innovation and his passion for creating a positive impact on society through his inventions make him a standout figure in the world of technology.