The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2023
Filed:
Aug. 14, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Trinh Hai Dang, Hsinchu, TW;
Hsing-Lien Lin, Hsin-Chu, TW;
Cheng-Yuan Tsai, Chu-Pei, TW;
Chin-Chieh Yang, New Taipei, TW;
Yu-Wen Liao, New Taipei, TW;
Wen-Ting Chu, Kaohsiung, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
The present disclosure, in some embodiments, relates to a resistive random access memory (RRAM) cell. The RRAM cell has a bottom electrode over a substrate. A data storage layer is over the bottom electrode and has a first thickness. A capping layer is over the data storage layer. The capping layer has a second thickness that is in a range of between approximately 1.9 and approximately 3 times thicker than the first thickness. A top electrode is over the capping layer.