Company Filing History:
Years Active: 2015-2023
Title: Trinh Hai Dang: Innovator in Resistive Random Access Memory Technology
Introduction
Trinh Hai Dang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of memory technology, particularly in resistive random access memory (RRAM) cells. With a total of 8 patents to his name, his work has been influential in advancing the capabilities of memory storage solutions.
Latest Patents
Trinh Hai Dang's latest patents focus on optimizing RRAM cell designs. One of his notable inventions is a high yield RRAM cell with an optimized film scheme. This patent describes a resistive random access memory cell that features a bottom electrode situated over a substrate. The data storage layer above the bottom electrode has a specific thickness, while a capping layer is placed over it, with a thickness that is between approximately 1.9 and 3 times that of the data storage layer. A top electrode is positioned over the capping layer, enhancing the overall performance of the memory cell.
Another patent by Trinh Hai Dang also pertains to a high yield RRAM cell with an optimized film scheme. In this design, the RRAM cell includes a bottom electrode over a lower interconnect layer, with a data storage layer of a defined thickness above it. The capping layer, again, has a thickness that is between approximately 2 and 3 times that of the data storage layer. This innovative design includes a top electrode and an upper interconnect layer, further improving the efficiency of the memory cell.
Career Highlights
Trinh Hai Dang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this company has allowed him to collaborate with other talented professionals in the field, contributing to groundbreaking advancements in memory technology.
Collaborations
Throughout his career, Trinh Hai Dang has worked alongside notable colleagues, including Hsing-Lien Lin and Cheng-Yuan Tsai. These collaborations have fostered an environment of innovation and creativity, leading to the development of cutting-edge technologies in the semiconductor sector.
Conclusion
Trinh Hai Dang's contributions to the field of resistive random access memory technology are noteworthy. His innovative patents and collaborations have significantly impacted the advancement of memory storage solutions. His work continues to inspire future developments in the industry.