The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2016
Filed:
Aug. 14, 2014
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Trinh Hai Dang, Hsinchu, TW;
Hsing-Lien Lin, Hsin-Chu, TW;
Cheng-Yuan Tsai, Chu-Pei, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Ru-Liang Lee, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
The present disclosure relates to a method of forming an RRAM cell having a dielectric data layer that provides good performance, device yield, and data retention, and an associated apparatus. In some embodiments, the method is performed by forming an RRAM film stack having a bottom electrode layer disposed over a semiconductor substrate, a top electrode layer, and a dielectric data storage layer disposed between the bottom electrode and the top electrode. The dielectric data storage layer has a performance enhancing layer with a hydrogen-doped oxide and a data retention layer having an aluminum oxide. The RRAM film stack is then patterned according to one or more masking layers to form a top electrode and a bottom electrode, and an upper metal interconnect layer is formed at a position electrically contacting the top electrode.