The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2018
Filed:
Jan. 08, 2015
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Trinh Hai Dang, Hsinchu, TW;
Hsing-Lien Lin, Hsin-Chu, TW;
Cheng-Yuan Tsai, Chu-Pei, TW;
Chin-Chieh Yang, New Taipei, TW;
Yu-Wen Liao, New Taipei, TW;
Wen-Ting Chu, Kaohsiung, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
The present disclosure relates to a method of forming a resistive random access memory (RRAM) cell having a good yield, and an associated apparatus. In some embodiments, the method is performed by forming a bottom electrode over a lower metal interconnect layer, and forming a variable resistance dielectric data storage layer having a first thickness onto the bottom electrode. A capping layer is formed onto the dielectric data storage layer. The capping layer has a second thickness that is in a range of between approximately 2 to approximately 3 times thicker than the first thickness. A top electrode is formed over the capping layer, and an upper metal interconnect layer is formed over the top electrode.