The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2024

Filed:

Jul. 06, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Chin-Chieh Yang, New Taipei, TW;

Chih-Yang Chang, Yuanlin Township, TW;

Wen-Ting Chu, Kaohsiung, TW;

Yu-Wen Liao, New Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); G11C 13/00 (2006.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 27/10 (2006.01);
U.S. Cl.
CPC ...
H10B 63/82 (2023.02); G11C 13/0011 (2013.01); G11C 13/0069 (2013.01); H10B 63/30 (2023.02); H10B 63/80 (2023.02); H10N 70/063 (2023.02); H10N 70/20 (2023.02); H10N 70/24 (2023.02); H10N 70/826 (2023.02); H10N 70/841 (2023.02); H10N 70/8833 (2023.02); H10N 70/8836 (2023.02); G11C 13/0002 (2013.01); G11C 13/0023 (2013.01); G11C 13/004 (2013.01); G11C 2213/79 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 27/101 (2013.01); H10B 63/32 (2023.02); H10B 63/84 (2023.02); H10N 70/011 (2023.02); H10N 70/023 (2023.02); H10N 70/821 (2023.02); H10N 70/8845 (2023.02);
Abstract

The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a first resistive random access memory (RRAM) element and a second RRAM element over a substrate. A conductive element is arranged below the first RRAM element and the second RRAM element. The conductive element electrically couples the first RRAM element to the second RRAM element. An upper insulating layer continuously extends over the first RRAM element and the second RRAM element. An upper inter-level dielectric (ILD) structure laterally surrounds the first RRAM element and the second RRAM element. The upper insulating layer separates the first RRAM element and the second RRAM element from the upper ILD structure.


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