The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2024
Filed:
Aug. 03, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Hsia-Wei Chen, Taipei, TW;
Chih-Yang Chang, Yuanlin Township, TW;
Chin-Chieh Yang, New Taipei, TW;
Jen-Sheng Yang, Keelung, TW;
Kuo-Chi Tu, Hsin-Chu, TW;
Wen-Ting Chu, Kaohsiung, TW;
Yu-Wen Liao, New Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a first interconnect within a first inter-level dielectric (ILD) layer over a substrate. A memory device is disposed over the first interconnect and is surrounded by a second ILD layer. A sidewall spacer is arranged along opposing sides of the memory device and an etch stop layer is arranged on the sidewall spacer. The sidewall spacer and the etch stop layer have upper surfaces that are vertically offset from one another by a non-zero distance. A second interconnect extends from a top of the second ILD layer to an upper surface of the memory device.