Jen-Sheng Yang

This inventor holds 32 USPTO granted patents, primarily in Resistive Memory Technology. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2014-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jen-Sheng Yang. Retrieved from https://idiyas.com/inventor/jen-sheng-yang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 32

% Patents Active = 93.8

Average Co-Inventor Count = 7.3

ph-index = 7

Forward Citations = 140(Granted Patents)

Location History:

Hsin-Chu, TW (2014)
Keelung, TW (2014 - 2024)

Company Filing History:

32 out of 43,653

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2014-2024

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Areas of Expertise:

RRAM Technology

Flat Bottom Electrode

High-K Metal Gate

Memory Structures

Data Storage Layer

Step Height Mitigation

Interconnect Landing

Self-Aligned Insulated Film

Semiconductor Devices

Memory Cells

PMOS Access Transistor

32 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11889705 - Interconnect landing method for RRAM technology (2024-01-30),

2. 11844286 - Flat bottom electrode via (BEVA) top surface for memory (2023-12-12),

3. 11751485 - Flat bottom electrode via (BEVA) top surface for memory (2023-09-05),

4. 11678592 - Step height mitigation in resistive random access memory structures (2023-06-13),

5. 11201281 - Method for forming a flat bottom electrode via (BEVA) top surface for memory (2021-12-14),

6. 11094744 - Interconnect landing method for RRAM technology (2021-08-17),

7. 11094545 - Self-aligned insulated film for high-K metal gate device (2021-08-17),

8. 11038108 - Step height mitigation in resistive random access memory structures (2021-06-15),

9. 11004975 - Semiconductor device and manufacturing method thereof (2021-05-11),

10. 10903274 - Interconnect landing method for RRAM technology (2021-01-26),

11. 10796759 - Method and apparatus for reading RRAM cell (2020-10-06),

12. 10763426 - Method for forming a flat bottom electrode via (BEVA) top surface for memory (2020-09-01),

13. 10727337 - Semiconductor device and manufacturing method thereof (2020-07-28),

14. 10566519 - Method for forming a flat bottom electrode via (BEVA) top surface for memory (2020-02-18),

15. 10566387 - Interconnect landing method for RRAM technology (2020-02-18),

Title: Jen-Sheng Yang: Pioneering Inventor from Keelung

Introduction: Jen-Sheng Yang is a renowned inventor hailing from Keelung, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Yang holds several patents in the areas of electronics, renewable energy, and sustainable technologies, showcasing his continuous commitment to pushing the boundaries of invention.

Career Highlights: With a career spanning over two decades, Yang has worked with leading tech companies and research institutions, spearheading projects that have led to significant advancements in various industries.

Collaborations: Throughout his career, Yang has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and knowledge-sharing.

Conclusion: Jen-Sheng Yang's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a trailblazing inventor, inspiring the next generation of innovators to dream big and push the limits of what is possible.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]