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For the Inventor, By the Inventor

Keelung, Taiwan

Jen-Sheng Yang

This inventor holds 32 USPTO granted patents. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2014-2024.

USPTO Granted Patents = 32

% Patents Active = 93.8

Average Co-Inventor Count = 7.3

ph-index = 7

Forward Citations = 140(Granted Patents)


Location History:

  • Hsin-Chu, TW (2014)
  • Keelung, TW (2014 - 2024)

Company Filing History:

goldMedal32 out of 42,711 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2014-2024

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Areas of Expertise:
RRAM Technology
Memory Structures
Flat Bottom Electrode
High-K Metal Gate
Semiconductor Devices
Data Storage Layer
PMOS Access Transistor
Step Height Mitigation
Self-Aligned Insulated Film
Ferroelectric Layer
Non-Volatile Memory
Memory Cells
32 patents (USPTO):Explore Patents
1. 11889705 - Interconnect landing method for RRAM technology (2024-01-30),
2. 11844286 - Flat bottom electrode via (BEVA) top surface for memory (2023-12-12),
3. 11751485 - Flat bottom electrode via (BEVA) top surface for memory (2023-09-05),
4. 11678592 - Step height mitigation in resistive random access memory structures (2023-06-13),
5. 11201281 - Method for forming a flat bottom electrode via (BEVA) top surface for memory (2021-12-14),
6. 11094744 - Interconnect landing method for RRAM technology (2021-08-17),
7. 11094545 - Self-aligned insulated film for high-K metal gate device (2021-08-17),
8. 11038108 - Step height mitigation in resistive random access memory structures (2021-06-15),
9. 11004975 - Semiconductor device and manufacturing method thereof (2021-05-11),
10. 10903274 - Interconnect landing method for RRAM technology (2021-01-26),
11. 10796759 - Method and apparatus for reading RRAM cell (2020-10-06),
12. 10763426 - Method for forming a flat bottom electrode via (BEVA) top surface for memory (2020-09-01),
13. 10727337 - Semiconductor device and manufacturing method thereof (2020-07-28),
14. 10566519 - Method for forming a flat bottom electrode via (BEVA) top surface for memory (2020-02-18),
15. 10566387 - Interconnect landing method for RRAM technology (2020-02-18),

Title: Jen-Sheng Yang: Pioneering Inventor from Keelung

Introduction: Jen-Sheng Yang is a renowned inventor hailing from Keelung, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Yang holds several patents in the areas of electronics, renewable energy, and sustainable technologies, showcasing his continuous commitment to pushing the boundaries of invention.

Career Highlights: With a career spanning over two decades, Yang has worked with leading tech companies and research institutions, spearheading projects that have led to significant advancements in various industries.

Collaborations: Throughout his career, Yang has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and knowledge-sharing.

Conclusion: Jen-Sheng Yang's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a trailblazing inventor, inspiring the next generation of innovators to dream big and push the limits of what is possible.

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