The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2021
Filed:
Jul. 16, 2019
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Jin-Aun Ng, Hsinchu, TW;
Bao-Ru Young, Zhubei, TW;
Harry-Hak-Lay Chuang, Singapore, SG;
Maxi Chang, Banciao, TW;
Chih-Tang Peng, Zhubei, TW;
Chih-Yang Yeh, Jhubei, TW;
Ta-Wei Lin, Minxiong Township, TW;
Huan-Just Lin, Hsinchu, TW;
Hui-Wen Lin, Taiping, TW;
Jen-Sheng Yang, Keelung, TW;
Pei-Ren Jeng, Chu-Bei, TW;
Jung-Hui Kao, Hsin-Chu, TW;
Shih-Hao Lo, Zhubei, TW;
Yuan-Tien Tu, Puzih, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method forming a gate dielectric over a substrate, and forming a metal gate structure over the semiconductor substrate and the gate dielectric. The metal gate structure includes a first metal material. The method further includes forming a seal on sidewalls of the metal gate structure. The method further includes forming a dielectric film on the metal gate structure, the dielectric film including a first metal oxynitride comprising the first metal material and directly on the metal gate structure without extending over the seal formed on sidewalls of the metal gate structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile