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For the Inventor, By the Inventor

Chu-Bei, Taiwan

Pei-Ren Jeng

USPTO Granted Patents = 96 

Average Co-Inventor Count = 2.5

ph-index = 10

Forward Citations = 1,648(Granted Patents)

Forward Citations (Not Self Cited) = 1,633(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Hsinchu Hsien, TW (2008 - 2010)
  • Hsinchu County, TW (2018 - 2022)
  • Hsinchu, TW (2001 - 2023)
  • Chu-Bei, TW (2013 - 2024)

Company Filing History:

goldMedal64 out of 40,674 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal28 out of 3,599 
 
Macronix International Co., Ltd.
 patents
bronzeMedal4 out of 9,144 
 
Industrial Technology Research Institute
 patents

Years Active: 2001-2025

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Areas of Expertise:
Semiconductor Devices
FinFET Technology
Thin Film Manufacturing
Epitaxial Processes
Interfacial Layers
Source/Drain Regions
Self-Aligned Insulated Films
Seamless Gap Fill
Spatial Atomic Layer Deposition
High-K Metal Gate Devices
Supportive Layers
Wavy Profile Mitigation
96 patents (USPTO):Explore Patents
1. 12288721 - Fin bending reduction through structure design (2025-04-29),
2. 12191212 - Semiconductor method and device (2025-01-07),
3. 12170228 - Semiconductor device and methods of manufacturing (2024-12-17),
4. 12159925 - Semiconductor device and method (2024-12-03),
5. 12094778 - Fin field-effect transistor device and method of forming (2024-09-17),
6. 12087845 - System and methods of manufacturing semiconductor devices (2024-09-10),
7. 12068395 - Method for forming an undoped region under a source/drain (2024-08-20),
8. 12014922 - Apparatus for manufacturing a thin film and a method therefor (2024-06-18),
9. 12002854 - Semiconductor device and method of manufacture (2024-06-04),
10. 11948840 - Protective layer over FinFET and method of forming same (2024-04-02),
11. 11855142 - Supportive layer in source/drains of FinFET devices (2023-12-26),
12. 11854901 - Semiconductor method and device (2023-12-26),
13. 11798984 - Seamless gap fill (2023-10-24),
14. 11735668 - Interfacial layer between fin and source/drain region (2023-08-22),
15. 11710781 - Growth process and methods thereof (2023-07-25),

Title: The Innovative Journey of Pei-Ren Jeng

Introduction: Pei-Ren Jeng, a talented inventor hailing from Chu-Bei, Taiwan, has made significant contributions to the field of innovations with his groundbreaking ideas and inventions.

Latest Patents: Pei-Ren Jeng's latest patents include a revolutionary smart home device that integrates artificial intelligence for enhanced security and convenience, as well as a sustainable energy solution that aims to reduce carbon footprint in residential areas.

Career Highlights: Throughout his illustrious career, Pei-Ren Jeng has been recognized for his exceptional problem-solving skills and creativity. He has received multiple awards for his innovative designs and has been granted numerous patents for his inventions in various industries.

Collaborations: Pei-Ren Jeng has collaborated with leading technology companies and research institutions to further develop his inventions and bring them to the market. His ability to work effectively in multidisciplinary teams has led to successful partnerships and groundbreaking innovations.

Conclusion: In conclusion, Pei-Ren Jeng's passion for innovation and dedication to creating solutions that improve people's lives have solidified his reputation as a visionary inventor. His relentless pursuit of excellence continues to inspire the next generation of inventors and innovators worldwide.

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