Shanghai, China

Fei Zhou

USPTO Granted Patents = 153 

 

Average Co-Inventor Count = 1.0

ph-index = 4

Forward Citations = 86(Granted Patents)

Forward Citations (Not Self Cited) = 64(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Shaghai, CN (2018)
  • Shanghai, CA (2020)
  • Shanghai, CN (2017 - 2024)

Company Filing History:


Years Active: 2017-2025

Loading Chart...
Loading Chart...
Areas of Expertise:
Semiconductor Device
Semiconductor Structure
Fabrication Method
Diode Design
Finfet Device
Isolation Layer
Dummy Gate
Radiation Measurement
Wireless Signal Positioning
Transistor Formation
Gate Dielectric Layer
Protection Layer
153 patents (USPTO):Explore Patents

Title: Fei Zhou: A Shanghai-Based Innovator with 143 Patents

Introduction:

Fei Zhou is a prolific inventor hailing from Shanghai, China, with a remarkable track record in the field of semiconductor devices. With a strong focus on enhancing the performance and efficiency of integrated circuits, Zhou has contributed significantly to the technological advancements in the industry. This article highlights his latest patents, career highlights, collaborations, and the impact of his work on the semiconductor landscape.

Latest Patents:

Zhou's most recent patents demonstrate his expertise in semiconductor device design and fabrication. One of his notable inventions includes a semiconductor device featuring a base substrate with distinct regions, doped layers, gate structures, and conductive layers. This innovation aims to optimize the functionality and efficiency of semiconductor devices while maintaining proper insulation and conduction through different regions.

Another noteworthy patent by Zhou is a novel semiconductor structure consisting of a fin heat-dissipation region, fin channel part, and isolation structure. By carefully designing the width and arrangement of these elements, Zhou's invention seeks to enhance heat dissipation and ensure optimal performance in semiconductor devices.

Career Highlights:

Throughout his career, Zhou has made significant contributions to the semiconductor industry, primarily through his involvement in various companies. He has worked with Semiconductor Manufacturing International Corporation both in Shanghai and Beijing. These enterprises, well-known names in the industry, have provided Zhou with an excellent platform to develop and refine his innovative ideas.

Collaborations:

Zhou's accomplishments are also attributable to his collaborations with industry experts and colleagues. Notably, he has worked closely with Zhongshan Hong and Bin Lin, two prominent figures in the field of semiconductor devices. These collaborations have undoubtedly enriched Zhou's work and facilitated the exchange of ideas, leading to the creation of cutting-edge inventions in the industry.

Conclusion:

Fei Zhou's extensive patent portfolio and contributions to the field of semiconductor devices reflect his deep understanding and passion for innovation. His latest patents demonstrate his commitment to pushing the boundaries of semiconductor technology, optimizing performance, and tackling critical challenges in the industry. As an influential figure in semiconductor research, Zhou's work continues to inspire and shape future advancements in the field.

Please note that the information provided in this article is based on the available data on Fei Zhou and his patents at the time of writing. For a comprehensive overview of Zhou's work and contributions, it is advisable to refer to authoritative sources and publications.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…