The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2023
Filed:
Jan. 14, 2022
Applicants:
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Inventor:
Fei Zhou, Shanghai, CN;
Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/373 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/76 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 23/367 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3738 (2013.01); H01L 21/02252 (2013.01); H01L 21/76 (2013.01); H01L 23/367 (2013.01); H01L 29/0649 (2013.01); H01L 29/6681 (2013.01); H01L 29/66818 (2013.01); H01L 29/7851 (2013.01);
Abstract
A semiconductor structure is provided. The semiconductor structure includes: a fin heat-dissipation region on a substrate; a fin channel part on the fin heat-dissipation region, and an isolation structure on the substrate. A width of the fin channel part is smaller than a width of the fin heat-dissipation region. A top surface of the isolation structure is coplanar with a top surface of the fin heat-dissipation region.