The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2023
Filed:
Oct. 07, 2021
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Fei Zhou, Shanghai, CN;
Abstract
A semiconductor device is provided. The semiconductor device includes a base substrate; a first well region and a second well region in the base substrate; a gate electrode structure, sidewall spacers, a doped source layer and a doped drain layer over the base substrate; a dielectric layer on the base substrate; and an isolation layer in the dielectric layer. The dielectric layer covers sidewalls of the sidewall spacers, the doped source layer and the doped drain layer, and exposes a top surface of the gate electrode structure. The isolation layer is in the gate electrode structure of the second well region and the base substrate of the second well region, and adjacent to the sidewalls of the sidewall spacer over the second well region.