The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 24, 2025

Filed:

Jan. 11, 2022
Applicants:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;

Inventor:

Fei Zhou, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/01 (2025.01); H10D 30/67 (2025.01); H10D 64/23 (2025.01);
U.S. Cl.
CPC ...
H10D 64/258 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 64/017 (2025.01); H10D 64/018 (2025.01);
Abstract

A semiconductor structure includes a base substrate including a first region and a second region. The semiconductor further includes a first fin member located over the first region, a second fin member located over the second region, a first dummy gate across a surface of the first fin member, and a second dummy gate across a surface of the second fin member. A first opening is formed in the first fin member located on each side of the first dummy gate, a second opening is formed between two adjacent first channel layers, a third opening is formed in the second fin member located at each side of the second dummy gate, and a fourth opening is formed between two second channel layers. The semiconductor structure still further includes a first inner spacer located in the second opening, and a second inner spacer located in the fourth opening.


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