The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2023
Filed:
Jan. 04, 2021
Applicants:
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Smic New Technology Research and Development (Shanghai) Corporation, Shanghai, CN;
Inventor:
Fei Zhou, Shanghai, CN;
Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 21/3065 (2006.01); H01L 21/3213 (2006.01); H01L 21/28 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/28008 (2013.01); H01L 21/3065 (2013.01); H01L 21/32135 (2013.01); H01L 21/76224 (2013.01); H01L 21/76232 (2013.01); H01L 21/823481 (2013.01); H01L 21/823821 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01); H01L 29/785 (2013.01);
Abstract
A semiconductor device is provided. The semiconductor device includes a semiconductor substrate; fins on the semiconductor substrate; an isolation layer formed on the semiconductor substrate and between adjacent fins; and gate structures on sides of the isolation layer. The isolation layer has a top surface higher than top surfaces of the fins and passes through the fins along a direction perpendicular to an extending direction of the fins and in parallel with a surface of the semiconductor substrate.