The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 03, 2024

Filed:

Jul. 20, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Ji-Yin Tsai, Zhudong Township, TW;

Jung-Jen Chen, Hsinchu, TW;

Pei-Ren Jeng, Chu-Bei, TW;

Chii-Horng Li, Zhubei, TW;

Kei-Wei Chen, Tainan, TW;

Yee-Chia Yeo, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/223 (2006.01); H01L 29/161 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66818 (2013.01); H01L 21/223 (2013.01); H01L 29/161 (2013.01); H01L 29/7849 (2013.01); H01L 29/785 (2013.01); H01L 21/02236 (2013.01); H01L 21/306 (2013.01);
Abstract

In an embodiment, a device includes: a substrate; a first semiconductor region extending from the substrate, the first semiconductor region including silicon; a second semiconductor region on the first semiconductor region, the second semiconductor region including silicon germanium, edge portions of the second semiconductor region having a first germanium concentration, a center portion of the second semiconductor region having a second germanium concentration less than the first germanium concentration; a gate stack on the second semiconductor region; and source and drain regions in the second semiconductor region, the source and drain regions being adjacent the gate stack.


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