IDiyas

For the Inventor, By the Inventor

Zhudong, Taiwan

Ji-Yin Tsai

USPTO Granted Patents = 13 

Average Co-Inventor Count = 5.0

ph-index = 3

Forward Citations = 1,964(Granted Patents)


Location History:

  • Zhudong Township, TW (2014 - 2024)
  • Hsinchu County, TW (2024)

Company Filing History:

goldMedal13 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2014-2025

Loading Chart...
13 patents (USPTO):Explore Patents
1. 12324190 - Method and multi-channel devices with anti-punch-through features (2025-06-03),
2. 12255102 - Methods of forming of inner spacer structure using semiconductor material with variable germanium concentration (2025-03-18),
3. 12159925 - Semiconductor device and method (2024-12-03),
4. 12068395 - Method for forming an undoped region under a source/drain (2024-08-20),
5. 11862709 - Inner spacer structure and methods of forming such (2024-01-02),
6. 11616133 - Fin field-effect transistor device and method (2023-03-28),
7. 11437497 - Semiconductor device and method (2022-09-06),
8. 11316030 - Fin field-effect transistor device and method (2022-04-26),
9. 9887290 - Silicon germanium source/drain regions (2018-02-06),
10. 8962400 - In-situ doping of arsenic for source and drain epitaxy (2015-02-24),
11. 8878302 - Semiconductor device having SiGe substrate, interfacial layer and high K dielectric layer (2014-11-04),
12. 8866188 - Semiconductor devices and methods of manufacture thereof (2014-10-21),
13. 8785285 - Semiconductor devices and methods of manufacture thereof (2014-07-22),

Title: The Innovative Mind of Ji-Yin Tsai

Introduction

Ji-Yin Tsai, a prominent inventor based in Zhudong, Taiwan, has made significant contributions to the field of semiconductor technology. With a total of 12 patents to his name, he continues to advance the industry through innovative methods and solutions.

Latest Patents

Among his latest innovations is a patent for a "Method and multi-channel devices with anti-punch-through features." This patent details a comprehensive method involving the formation of features in a semiconductor substrate and the epitaxial growth of semiconductor layers, showcasing his expertise in optimizing semiconductor structures. Another noteworthy patent focuses on "Methods of forming an inner spacer structure using semiconductor material with variable germanium concentration." This process involves the meticulous layering of different semiconductor elements and the creation of a gap for enhanced functionality, reflecting his commitment to innovation in semiconductor design.

Career Highlights

Ji-Yin Tsai works at Taiwan Semiconductor Manufacturing Company Limited, one of the world's leading semiconductor manufacturers. His role at this esteemed company allows him to leverage his inventive skills to contribute to cutting-edge technology and advancements in the semiconductor field.

Collaborations

Throughout his career, Tsai has collaborated with other skilled professionals, including Chih-Hsin Ko and Clement Hsingjen Wann. These collaborations have facilitated the sharing of ideas and expertise, further driving innovation in their projects and enhancing the quality of their work.

Conclusion

In conclusion, Ji-Yin Tsai is an influential figure in the semiconductor industry whose patents and collaborative efforts continue to shape the future of technology. His dedication to innovation and excellence positions him as a key contributor to advancements in semiconductor applications.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…