The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2022
Filed:
Sep. 15, 2020
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Che-Lun Chang, Hsinchu, TW;
Shiao-Shin Cheng, Hsinchu, TW;
Ji-Yin Tsai, Zhudong Township, TW;
Yu-Lin Tsai, Hsinchu, TW;
Hsin-Chieh Huang, Hsinchu, TW;
Ming-Yuan Wu, Hsinchu, TW;
Jiun-Ming Kuo, Taipei, TW;
Ming-Jie Huang, Hsinchu, TW;
Yu-Wen Wang, New Taipei, TW;
Che-Yuan Hsu, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method includes forming a doped region on a top portion of a substrate, forming a first epitaxial layer over the substrate, forming a recess in the first epitaxial layer, the recess being aligned to the doped region, performing a surface clean treatment in the recess, the surface clean treatment includes: oxidizing surfaces of the recess to form an oxide layer in the recess, and removing the oxide layer from the surfaces of the recess, and forming a second epitaxial layer in the recess.