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For the Inventor, By the Inventor

Taipei, Taiwan

Jiun-Ming Kuo

USPTO Granted Patents = 42 

Average Co-Inventor Count = 5.6

ph-index = 3

Forward Citations = 21(Granted Patents)


Company Filing History:

goldMedal42 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2014-2025

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42 patents (USPTO):
1. 12426347 - Multi-gate transistor channel height adjustment (2025-09-23),
2. 12349381 - Dielectric isolation structure for multi-gate transistors (2025-07-01),
3. 12294028 - Manufacturing method of semiconductor device (2025-05-06),
4. 12255102 - Methods of forming of inner spacer structure using semiconductor material with variable germanium concentration (2025-03-18),
5. 12249539 - Multigate device structure with engineered cladding and method making the same (2025-03-11),
6. 12230712 - Dielectric fin structure (2025-02-18),
7. 12206004 - Gate all around device and method of forming the same (2025-01-21),
8. 12205907 - Seal ring structures (2025-01-21),
9. 12176212 - Mandrel structures and methods of fabricating the same in semiconductor devices (2024-12-24),
10. 12166076 - Semiconductor device and methods of forming the same (2024-12-10),
11. 12136651 - Silicon-germanium Fins and methods of processing the same in field-effect transistors (2024-11-05),
12. 12125851 - FinFET device and method of forming the same (2024-10-22),
13. 12113113 - Semiconductor device with a core-shell feature and method for forming the same (2024-10-08),
14. 12080715 - Semiconductor device with varying gate dimensions and methods of forming the same (2024-09-03),
15. 12080603 - Active region cut process (2024-09-03),

Title: Innovating Semiconductor Technology: The Patents of Jiun-Ming Kuo

Introduction: Jiun-Ming Kuo, an accomplished inventor based in Taipei, Taiwan, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 37 patents, his work primarily focuses on innovative structures and methods that enhance the performance and functionality of semiconductor devices.

Latest Patents: Among Jiun-Ming Kuo's latest patents are groundbreaking inventions that include a dielectric fin structure and a gate all-around device. The dielectric fin structure patent describes a semiconductor device that integrates a dielectric fin featuring a helmet layer, a gate structure positioned over a portion of the helmet layer, and a dielectric layer that enhances device performance. The unique configuration of the first and second portions of the fin structure improves electrical performance, showcasing his expertise in semiconductor design.

The gate all-around device patent outlines a refined method for fabricating semiconductor layers. It involves the formation of interleaving semiconductor layers of varying thicknesses, with subsequent annealing and patterning to create fin-shaped structures. This innovative process culminates in the formation of a metal gate, significantly boosting the device's efficiency.

Career Highlights: Jiun-Ming Kuo has dedicated his career to advancing semiconductor technology while working for Taiwan Semiconductor Manufacturing Company, Ltd. His inventive spirit and technical expertise have led to numerous patents, establishing him as a key figure in the industry.

Collaborations: In his professional journey, Kuo has collaborated with esteemed colleagues, including Yuan-Ching Peng and Hung-Ju Chou. Together, they have contributed to pioneering research and innovations within the semiconductor field, further influencing technological advancements.

Conclusion: Jiun-Ming Kuo's prolific output of patents and his commitment to innovation firmly positions him as a leading inventor in semiconductor technology. With his continued work at Taiwan Semiconductor Manufacturing Company, Ltd., Kuo is likely to remain at the forefront of groundbreaking advancements that shape the future of electronics.

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