The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2024
Filed:
Aug. 16, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Jen-Hong Chang, Hsinchu, TW;
Yi-Hsiu Liu, Taipei, TW;
You-Ting Lin, Miaoli County, TW;
Chih-Chung Chang, Mingjian Township, TW;
Kuo-Yi Chao, Hsinchu, TW;
Jiun-Ming Kuo, Taipei, TW;
Yuan-Ching Peng, Hsinchu, TW;
Sung-En Lin, Hsinchu, TW;
Chia-Cheng Chao, Hsinchu, TW;
Chung-Ting Ko, Kaohsiung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a first channel region, a second channel region, and a first insulating fin, the first insulating fin being interposed between the first channel region and the second channel region. The first insulating fin includes a lower portion and an upper portion. The lower portion includes a fill material. The upper portion includes a first dielectric layer on the lower portion, the first dielectric layer being a first dielectric material, a first capping layer on the first dielectric layer, the first capping layer being a second dielectric material, the second dielectric material being different than the first dielectric material, and a second dielectric layer on the first capping layer, the second dielectric layer being the first dielectric material.