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For the Inventor, By the Inventor

Hsinchu, Taiwan

Yuan-Ching Peng

USPTO Granted Patents = 58 

Average Co-Inventor Count = 4.7

ph-index = 5

Forward Citations = 114(Granted Patents)

Forward Citations (Not Self Cited) = 104(Dec 10, 2025)


Location History:

  • Hinchu, TW (2022)
  • Hsinchu, TW (1999 - 2024)

Company Filing History:

goldMedal54 out of 40,780 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal3 out of 7,085 
 
United Microelectronics Corp.
 patents
bronzeMedal1 out of 9,152 
 
Industrial Technology Research Institute
 patents

Years Active: 1999-2025

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Areas of Expertise:
Memory Structure
Multi-Gate Transistor
Dielectric Isolation
Integrated Circuit Structure
FinFET Device
Backside Vias
Tunable Channel Layer
Inner Spacer Structure
Gate-All-Around Device
Wavy Profile Mitigation
Elevated Strain Material
Dual Epitaxial Process
58 patents (USPTO):Explore Patents
1. 12501658 - Multi-gate field-effect transistors and methods of forming the same (2025-12-16),
2. 12477712 - Memory structure and method for manufacturing the same (2025-11-18),
3. 12426347 - Multi-gate transistor channel height adjustment (2025-09-23),
4. 12426297 - Method and structure for air gap inner spacer in gate-all-around devices (2025-09-23),
5. 12369334 - Method of manufacturing a semiconductor device and a semiconductor device (2025-07-22),
6. 12349381 - Dielectric isolation structure for multi-gate transistors (2025-07-01),
7. 12310057 - Semiconductor devices including backside vias and methods of forming the same (2025-05-20),
8. 12308287 - Integrated circuit structure with backside dielectric layer having air gap (2025-05-20),
9. 12268023 - Devices with improved operational current and reduced leakage current (2025-04-01),
10. 12255102 - Methods of forming of inner spacer structure using semiconductor material with variable germanium concentration (2025-03-18),
11. 12249539 - Multigate device structure with engineered cladding and method making the same (2025-03-11),
12. 12237232 - Methods for forming source/drain features (2025-02-25),
13. 12230712 - Dielectric fin structure (2025-02-18),
14. 12206004 - Gate all around device and method of forming the same (2025-01-21),
15. 12205907 - Seal ring structures (2025-01-21),

Title: The Innovative Journey of Yuan-Ching Peng

Introduction: Yuan-Ching Peng, a distinguished inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Yuan-Ching Peng's latest patents focus on advancements in semiconductor technology, particularly in the development of cutting-edge microchips for various electronic devices.

Career Highlights: With a career spanning over two decades, Peng has worked tirelessly to push the boundaries of technological innovation. His work has led to the creation of several patented inventions that have revolutionized the industry.

Collaborations: Throughout his career, Yuan-Ching Peng has collaborated with leading tech companies and research institutions to further his research and bring his inventions to life. His collaborative efforts have resulted in the successful commercialization of several groundbreaking technologies.

Conclusion: Yuan-Ching Peng's relentless pursuit of innovation and his dedication to pushing the limits of technology have solidified his position as a trailblazer in the field of semiconductor technology. His work continues to inspire future generations of inventors and researchers to think outside the box and strive for excellence in their pursuits.

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