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Yuan-Ching Peng

This inventor holds 61 USPTO granted patents and 40 published patent applications, primarily in Semiconductor Devices. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., United Microelectronics Corp., Industrial Technology Research Institute. Active years: 1999-2026.

USPTO Granted Patents = 61 (Patent Applications = 40)

% Patents Active = 96.7

Average Co-Inventor Count = 4.7

ph-index = 5

Forward Citations = 121(Granted Patents)

Forward Citations (Not Self Cited) = 104(Dec 10, 2025)

Location History:

Hinchu, TW (2022)
Hsinchu, TW (1999 - 2024)

Company Filing History:

57 out of 42,759

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

3 out of 7,260

United Microelectronics Corp.

patents

1 out of 9,301

Industrial Technology Research Institute

patents

Years Active: 1999-2026

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Areas of Expertise:

Integrated Circuit

Multi-Gate Transistors

Dielectric Structures

FinFET

Backside Vias

Air Gap Spacer

Channel Layer

Source/Drain Features

Tunable Structures

Mandrel Structures

Germanium Concentration

Seal Ring Structures

61 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12684812 - Methods for fabricating semiconductor device having nanostructure transistor with cap layer (2026-07-14),

2. 12648219 - Gate isolation features and methods of fabricating the same in semiconductor devices (2026-06-02),

3. 12557365 - Integrated circuit structure and method for fabricating the same (2026-02-17),

4. 12501658 - Multi-gate field-effect transistors and methods of forming the same (2025-12-16),

5. 12477712 - Memory structure and method for manufacturing the same (2025-11-18),

6. 12426347 - Multi-gate transistor channel height adjustment (2025-09-23),

7. 12426297 - Method and structure for air gap inner spacer in gate-all-around devices (2025-09-23),

8. 12369334 - Method of manufacturing a semiconductor device and a semiconductor device (2025-07-22),

9. 12349381 - Dielectric isolation structure for multi-gate transistors (2025-07-01),

10. 12310057 - Semiconductor devices including backside vias and methods of forming the same (2025-05-20),

11. 12308287 - Integrated circuit structure with backside dielectric layer having air gap (2025-05-20),

12. 12268023 - Devices with improved operational current and reduced leakage current (2025-04-01),

13. 12255102 - Methods of forming of inner spacer structure using semiconductor material with variable germanium concentration (2025-03-18),

14. 12249539 - Multigate device structure with engineered cladding and method making the same (2025-03-11),

15. 12237232 - Methods for forming source/drain features (2025-02-25),

Title: The Innovative Journey of Yuan-Ching Peng

Introduction: Yuan-Ching Peng, a distinguished inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Yuan-Ching Peng's latest patents focus on advancements in semiconductor technology, particularly in the development of cutting-edge microchips for various electronic devices.

Career Highlights: With a career spanning over two decades, Peng has worked tirelessly to push the boundaries of technological innovation. His work has led to the creation of several patented inventions that have revolutionized the industry.

Collaborations: Throughout his career, Yuan-Ching Peng has collaborated with leading tech companies and research institutions to further his research and bring his inventions to life. His collaborative efforts have resulted in the successful commercialization of several groundbreaking technologies.

Conclusion: Yuan-Ching Peng's relentless pursuit of innovation and his dedication to pushing the limits of technology have solidified his position as a trailblazer in the field of semiconductor technology. His work continues to inspire future generations of inventors and researchers to think outside the box and strive for excellence in their pursuits.

Profile summary based on public USPTO records.

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