The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
Aug. 12, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Yu-Fan Peng, Hsinchu, TW;
Yuan-Ching Peng, Hsinchu, TW;
Yu-Bey Wu, Hsinchu, TW;
Yu-Shan Lu, Hsinchu County, TW;
Hung Yu Lai, Hsinchu, TW;
Chen-Yu Chen, Taipei, TW;
Wen-Yun Wang, Taipei, TW;
Tang Ming Lee, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor structure includes a fin extending from a substrate and oriented lengthwise in a first direction, where the fin includes a stack of semiconductor layers, an isolation feature disposed over the substrate and oriented lengthwise in a second direction perpendicular to the first direction, where the isolation feature is disposed adjacent to the fin, and a metal gate structure having a top portion disposed over the stack of semiconductor layers and a bottom portion interleaved with the stack of semiconductor layers. Furthermore, a sidewall of the bottom portion of the metal gate structure is defined by a sidewall of the isolation feature, and the top portion of the metal gate structure laterally extends over a top surface of the isolation feature.