The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2026
Filed:
Jan. 27, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Ting-Jung Chien, Nantou County, TW;
Jiun-Ming Kuo, Taipei, TW;
Shih-Hao Fu, Taoyuan, TW;
Yuan-Ching Peng, Hsinchu, TW;
Yen-PO Lin, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method for fabricating an integrated circuit structure is provided. The method includes forming an epitaxial stack over a semiconductor substrate, wherein the epitaxial stack comprises a plurality of first epitaxial layers and a plurality of second epitaxial layers alternately arranged over the semiconductor substrate; patterning the epitaxial stack into a first fin and a second fin, wherein from a top view the first fin extends along a first direction, and the second fin has a first fin line extending along the first direction and a second fin line extending along a second direction different from the first direction; forming a first gate structure over a first portion of the first fin; etching a recess in a second portion of the first fin adjacent the first portion of the first fin; and forming a source/drain feature in the recess.