Shih-Hao Fu

Title: Shih-Hao Fu: Innovator in Semiconductor Technology

Introduction

Shih-Hao Fu is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approaches.

Latest Patents

One of his latest patents focuses on "Germanium hump reduction." This patent provides methods for forming semiconductor devices. The method includes receiving a workpiece that consists of a stack of semiconductor layers. It involves depositing a first pad oxide layer on a germanium-containing top layer of the stack, followed by a second pad oxide layer on the first pad oxide layer. Additionally, a pad nitride layer is deposited on the second pad oxide layer, and the stack is patterned using these layers as a hard mask. The process specifies that the depositing of the first pad oxide layer utilizes a first oxygen plasma power, while the second pad oxide layer is deposited with a greater second oxygen plasma power.

Career Highlights

Shih-Hao Fu is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work has been instrumental in advancing semiconductor device fabrication techniques.

Collaborations

He has collaborated with notable coworkers, including Hung-Ju Chou and Che-Lun Chang, contributing to various projects that enhance semiconductor technology.

Conclusion

Shih-Hao Fu's innovative work in semiconductor technology, particularly in germanium hump reduction, highlights his role as a key inventor in the field. His contributions continue to influence advancements in semiconductor device manufacturing.