Taiwan Semiconductor Manufacturing Comp. Ltd.

Shih-Hao Fu

Yuan-Ching Peng

Jiun-Ming Kuo

Chunyao Wang

Sung-En Lin

Che-Lun Chang

Hung-Ju Chou

Nung-Che Cheng

The present disclosure provides methods of forming semiconductor devices. A method according to the present disclosure includes receiving a workpiece that includes a stack of semiconductor layers, depositing a first pad oxide layer on a germanium-containing top layer of the stack, depositing a second pad oxide layer on the first pad oxide layer, depositing a pad nitride layer on the second pad oxide layer, and patterning the stack using the first pad oxide layer, the second pad oxide layer, and the pad nitride layer as a hard mask layer. The depositing of the first pad oxide layer includes a first oxygen plasma power and the depositing of the second pad oxide layer includes a second oxygen plasma power greater than the first oxygen plasma power.

Germanium hump reduction

Growing community of inventors

Hsinchu, Taiwan

Shih-Hao Fu