Hsinchu, Taiwan

Che-Lun Chang

This inventor holds 20 USPTO granted patents and 16 published patent applications, primarily in Semiconductor Devices. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2021-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Che-Lun Chang. Retrieved from https://idiyas.com/inventor/che-lun-chang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20 

% Patents Active = 90.0

Average Co-Inventor Count = 4.8

ph-index = 2

Forward Citations = 14(Granted Patents)


Location History:

  • Hsinshu, TW (2023)
  • Kaohsiung, TW (2021 - 2024)
  • Hsinchu, TW (2022 - 2024)

Company Filing History:


Years Active: 2021-2026

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Areas of Expertise:
Integrated Circuit Structure
Backside Via
Semiconductor Device
CMP Process
Dielectric Layer
Fin Field-Effect Transistor
Inner Spacer Structure
Germanium Concentration
Multi-Gate Device
Interconnection Structure
20 patents (USPTO):Explore Patents

Title: Innovations by Inventor Che-Lun Chang

Introduction

Che-Lun Chang, a prominent inventor based in Hsinchu, Taiwan, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio totaling 16 patents, he showcases a commitment to advancing innovations that enhance the performance and functionality of semiconductor devices.

Latest Patents

Among Che-Lun Chang's latest patents are those focusing on semiconductor devices with backside vias and integrated circuit structures. One notable patent describes semiconductor devices incorporating backside vias along with methods for their formation. This innovation details a device featuring a first transistor structure accompanied by a complex interconnect and dielectric arrangement. The embodiment delineates a first contact with intricately designed tapered sidewalls, enhancing the device's efficiency.

Another noteworthy patent involves an integrated circuit structure that integrates a backside dielectric layer containing an air gap. This structure boasts a comprehensive configuration, including a gate structure, source and drain epitaxial structures, and an advanced backside interconnection setup. This design not only optimizes space but also improves the electrical performance of semiconductor devices.

Career Highlights

Che-Lun Chang's career is primarily associated with Taiwan Semiconductor Manufacturing Company Ltd., a leading figure in semiconductor manufacturing. His expertise in designing advanced semiconductor technologies has positioned him as a valuable asset in the industry. His 16 patents reflect innovative approaches to tackling challenges in device design and interconnect structures, emphasizing his role as a trailblazer in his field.

Collaborations

Throughout his career, Che-Lun Chang has collaborated with esteemed colleagues such as Yuan-Ching Peng and Jiun-Ming Kuo. These collaborations have facilitated the exchange of ideas and led to breakthroughs in semiconductor technologies, highlighting the importance of teamwork in driving innovation within the sector.

Conclusion

Che-Lun Chang’s contributions to semiconductor technology through his 16 patents have considerably impacted the industry. His ongoing work at Taiwan Semiconductor Manufacturing Company Ltd. and collaborations with peers underline the vital role of innovation in enhancing the performance of semiconductor devices. As the technology landscape continues to evolve, inventors like Che-Lun Chang remain at the forefront, driving advancements that shape the future of the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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