The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2024
Filed:
Mar. 11, 2021
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Yi-Chen Ho, Taichung, TW;
You-Hua Chou, Hsinchu, TW;
Yen-Hao Liao, New Taipei, TW;
Che-Lun Chang, Kaohsiung, TW;
Zhen-Cheng Wu, Taichung, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02203 (2013.01); H01L 21/0228 (2013.01); H01L 21/31138 (2013.01); H01L 21/7682 (2013.01); H01L 23/5329 (2013.01); H01L 23/53295 (2013.01); H01L 21/02118 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01); H01L 21/02299 (2013.01); H01L 21/76807 (2013.01); H01L 21/76835 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01);
Abstract
A structure includes a first dielectric film and a second dielectric film. The second dielectric film is formed on and in contact with the first dielectric film, in which a first pore is formed between the first dielectric film and the second dielectric film, and a thickness of the first dielectric film is smaller than a diameter of the first pore.