The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2026
Filed:
Feb. 03, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Kuan-Ting Pan, Taipei City, TW;
Che-Lun Chang, Hsinchu, TW;
Kuo-Cheng Chiang, Zhubei City, TW;
Chih-Hao Wang, Baoshan Township, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor structure and a method for forming the same are provided. The semiconductor device structure includes a substrate having a first region and a second region, and a plurality of first nanostructures stacked in a vertical direction in the first region. The semiconductor device structure includes a plurality of second nanostructures stacked in the vertical direction in the second region, and a silicon germanium (SiGe) layer formed below the first nanostructures in the first region. The semiconductor device structure also includes a first gate structure surrounding the first nanostructures in the first region, and a second gate structure surrounding the second nanostructures in the second region. The bottommost surface of the second gate structure is lower than the bottommost surface of the first gate structure.