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For the Inventor, By the Inventor

Hsinchu, Taiwan

Ming-Jie Huang

This inventor holds 29 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Devices. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2004-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ming-Jie Huang. Retrieved from https://idiyas.com/inventor/ming-jie-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 29 

% Patents Active = 75.9

Average Co-Inventor Count = 3.7

ph-index = 8

Forward Citations = 189(Granted Patents)


Company Filing History:

goldMedal29 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2004-2025

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Areas of Expertise:
Semiconductor Device
FinFET
Isolation Structure
Source/Drain
Low-k Dielectric
Metal Gate
Crown Active Regions
EPI Process
Pitch Dimension Shrinkage
Dual Etch Method
Hard Mask
Ultra-Narrow Gates
29 patents (USPTO):Explore Patents
1. 12336235 - Semiconductor device having isolation structure formed of low-k dielectric material and method for forming the same (2025-06-17),
2. 11616133 - Fin field-effect transistor device and method (2023-03-28),
3. 11316030 - Fin field-effect transistor device and method (2022-04-26),
4. 10868166 - Highly strained source/drain trenches in semiconductor devices (2020-12-15),
5. 10867807 - Semiconductor device and method (2020-12-15),
6. 10186511 - Metal gate isolation structure and method forming same (2019-01-22),
7. 10134604 - Semiconductor device and method (2018-11-20),
8. 9917085 - Metal gate isolation structure and method forming same (2018-03-13),
9. 9543210 - Forming crown active regions for FinFETs (2017-01-10),
10. 9412666 - Equal gate height control method for semiconductor device with different pattern densites (2016-08-09),
11. 9214358 - Equal gate height control method for semiconductor device with different pattern densites (2015-12-15),
12. 9130058 - Forming crown active regions for FinFETs (2015-09-08),
13. 8900957 - Method of dual epi process for semiconductor device (2014-12-02),
14. 8900956 - Method of dual EPI process for semiconductor device (2014-12-02),
15. 8877614 - Spacer for semiconductor structure contact (2014-11-04),

Title: Inventor Ming-Jie Huang

Introduction: Ming-Jie Huang is a renowned inventor based in Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Ming-Jie Huang holds several patents in the areas of semiconductor technology, nanotechnology, and renewable energy solutions. His most recent patents focus on enhancing the efficiency of solar cells and developing advanced materials for electronic devices.

Career Highlights: With a background in electrical engineering and materials science, Ming-Jie Huang has had a distinguished career working in both academia and industry. He has held key research positions in leading technology companies and has been instrumental in developing cutting-edge technologies that have revolutionized the industry.

Collaborations: Ming-Jie Huang has collaborated with top research institutions, universities, and multinational corporations on various projects aimed at pushing the boundaries of innovation. His collaborative efforts have resulted in the successful development of new products and technologies that have had a significant impact on the market.

Conclusion: Ming-Jie Huang's passion for innovation and his relentless pursuit of technological advancement have established him as a prominent figure in the world of inventors. His work continues to inspire the next generation of innovators and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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