The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Nov. 11, 2015
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01L 21/8234 (2006.01); H01L 21/3115 (2006.01); H01L 21/28 (2006.01); H01L 21/321 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823437 (2013.01); H01L 21/28035 (2013.01); H01L 21/3115 (2013.01); H01L 21/3212 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 29/66545 (2013.01);
Abstract
A method of forming a semiconductor integrated circuit (IC) includes forming a first semiconductor layer over a substrate, the first semiconductor layer having an uneven upper surface, forming a stop layer over the first semiconductor layer, the first semiconductor layer disposed between the substrate and the stop layer, and treating the stop layer to change its etch selectivity relative to the first semiconductor layer.