The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Jul. 21, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Szu-Hua Chen, Tainan, TW;
Cheng-Ming Lin, Kaohsiung, TW;
Han-Yu Lin, Nantou County, TW;
Wei-Yen Woon, Taoyuan, TW;
Ming-Jie Huang, Hsinchu, TW;
Ting-Gang Chen, Taipei, TW;
Tai-Chun Huang, Hsin-Chu, TW;
Ming-Chang Wen, Kaohsiung, TW;
Szuya Liao, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device having a low-k isolation structure and a method for forming the same are provided. The semiconductor device includes channel structures, laterally extending on a substrate; gate structures, intersecting and covering the channel structures; and a channel isolation structure, laterally penetrating through at least one of the channel structures, and extending between separate sections of one of the gate structures along an extending direction of the one of the gate structures. A low-k dielectric material in the channel isolation structure comprises boron nitride.