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For the Inventor, By the Inventor

Taipei, Taiwan

Ting-Gang Chen

This inventor holds 27 USPTO granted patents and 14 published patent applications, primarily in Semiconductor Devices. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2018-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ting-Gang Chen. Retrieved from https://idiyas.com/inventor/ting-gang-chen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 27 

% Patents Active = 100.0

Average Co-Inventor Count = 5.4

ph-index = 3

Forward Citations = 22(Granted Patents)


Location History:

  • Hsinchu, TW (2023)
  • Taipei, TW (2018 - 2024)

Company Filing History:

goldMedal26 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal1 out of 481 
 
Taiwan Semiconductor Manufacturing Co., Ltd.
 patents

Years Active: 2018-2026

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Areas of Expertise:
Semiconductor Device
Gate Isolation Structure
Multilayer Masking Layer
Low-k Dielectric Material
Cut Metal Gate
Dielectric Spacer
FinFET
Plasma Enhanced Deposition
Transistor Devices
Insulating Film Stack
Manufacturing Methods
Isolation Structure
27 patents (USPTO):Explore Patents
1. 12557364 - Semiconductor device with gate isolation structure (2026-02-17),
2. 12543335 - Multilayer masking layer and method of forming same (2026-02-03),
3. 12490488 - Semiconductor device structure and methods of forming the same (2025-12-02),
4. 12388021 - Semiconductor device and method (2025-08-12),
5. 12336235 - Semiconductor device having isolation structure formed of low-k dielectric material and method for forming the same (2025-06-17),
6. 12283485 - Cut metal gate refill with void (2025-04-21),
7. 12255205 - Semiconductor device with isolation structure (2025-03-18),
8. 12142608 - Semiconductor device and method for making the same (2024-11-12),
9. 12119268 - Multi-layered insulating film stack (2024-10-15),
10. 12087775 - Gate structures in transistor devices and methods of forming same (2024-09-10),
11. 12068162 - Semiconductor device and method (2024-08-20),
12. 12051735 - Dielectric spacer to prevent contacting shorting (2024-07-30),
13. 11955370 - Semiconductor devices and methods of manufacture (2024-04-09),
14. 11855185 - Multilayer masking layer and method of forming same (2023-12-26),
15. 11823955 - Multi-layered insulating film stack (2023-11-21),

Title: The Innovative Journey of Ting-Gang Chen

Introduction: Ting-Gang Chen, a pioneering inventor hailing from Taipei, Taiwan, has made significant contributions to the world of technology and innovation through his groundbreaking inventions.

Latest Patents: Chen's latest patents showcase his forward-thinking approach and commitment to pushing the boundaries of technological advancement. His recent patents focus on areas such as artificial intelligence, renewable energy, and biotechnology.

Career Highlights: With a career spanning over two decades, Ting-Gang Chen has established himself as a leading figure in the field of innovation. His work has not only earned him recognition within the industry but has also positively impacted society as a whole.

Collaborations: Throughout his career, Chen has collaborated with top research institutions, universities, and leading companies to further his research and bring his inventions to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of his projects.

Conclusion: Ting-Gang Chen's relentless pursuit of innovation and his passion for creating solutions to complex problems have solidified his position as a respected inventor in the global technology landscape. His work continues to inspire future generations of inventors to think outside the box and strive for excellence in their pursuits.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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