The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2024
Filed:
Sep. 01, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Ting-Gang Chen, Taipei, TW;
Bo-Cyuan Lu, New Taipei, TW;
Tai-Chun Huang, Hsinchu, TW;
Chi On Chui, Hsinchu, TW;
Chieh-Ping Wang, Taichung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes first transistor having a first gate stack and first source/drain regions on opposing sides of the first gate stack; a second transistor having a second gate stack and second source/drain regions on opposing sides of the second gate stack; and a gate isolation structure separating the first gate stack from the second gate stack. The gate isolation structure includes a dielectric liner having a varied thickness along sidewalls of the first gate stack and the second gate stack and a dielectric fill material over the dielectric liner, wherein the dielectric fill material comprises a seam.