IDiyas

For the Inventor, By the Inventor

Zhubei, Taiwan

Szuya Liao

USPTO Granted Patents = 11 

Average Co-Inventor Count = 4.6

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:

goldMedal11 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2024-2025

Loading Chart...
11 patents (USPTO):
1. 12484253 - Metal features of a semiconductor device and methods for forming the same (2025-11-25),
2. 12437806 - Semiconductor device and operating method thereof (2025-10-07),
3. 12424275 - Static random-access memory (SRAM) device and related SRAM-based compute-in-memory devices (2025-09-23),
4. 12417941 - Isolation structures in semiconductor devices (2025-09-16),
5. 12363992 - Semiconductor device and manufacturing method thereof (2025-07-15),
6. 12336235 - Semiconductor device having isolation structure formed of low-k dielectric material and method for forming the same (2025-06-17),
7. 12334350 - Semiconductor device and method of manufacture (2025-06-17),
8. 12218225 - Radical treatment in supercritical fluid for gate dielectric quality improvement to CFET structure (2025-02-04),
9. 12132079 - Bonding and isolation techniques for stacked transistor structures (2024-10-29),
10. 12131954 - Selective epitaxy process for the formation of CFET local interconnection (2024-10-29),
11. 12119271 - Backside gate contact, backside gate etch stop layer, and methods of forming same (2024-10-15),

Title: Szuya Liao: Innovator in Semiconductor Technology

Introduction

Szuya Liao is a prominent inventor based in Zhubei, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. His work focuses on advancing memory cell designs and improving the efficiency of semiconductor devices.

Latest Patents

One of Szuya Liao's latest patents is for a semiconductor device and operating method. This innovative device includes a first memory cell and a second memory cell, where the first memory cell is designed to store a first data bit at a first node when activated. The second memory cell is configured to store the same data bit when the first memory cell is turned off. The design incorporates a first switch that transmits the data bit to the second memory cell and is turned off when the first memory cell is deactivated.

Another notable patent is for a static random-access memory (SRAM) device and related SRAM-based compute-in-memory devices. This SRAM cell features a first inverter that is cross-coupled to a second inverter. It includes a first pull-up transistor and a first pull-down transistor, which define a first storage node. The SRAM cell also comprises a first N-type pass-gate transistor and a first P-type pass-gate transistor, enhancing its functionality and efficiency.

Career Highlights

Szuya Liao is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this company has allowed him to collaborate with other talented professionals and contribute to groundbreaking advancements in semiconductor technology.

Collaborations

Some of Szuya Liao's notable coworkers include Wei-Yen Woon and Cheng-Yin Wang. Their collaborative efforts have played a crucial role in the development of innovative semiconductor solutions.

Conclusion

Szuya Liao's contributions to semiconductor technology through his patents and work at Taiwan Semiconductor Manufacturing Company Limited highlight his importance in the field. His innovative designs continue to influence the development of advanced memory cell technologies.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…