The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Jan. 13, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Chao-Ching Cheng, Hsinchu City, TW;
Jui-Chien Huang, Hsinchu City, TW;
Yi-Tse Hung, Hsinchu, TW;
Shih Hao Wang, Taipei City, TW;
Han Wang, Hsinchu, TW;
Szuya Liao, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10D 86/00 (2025.01); H10D 86/01 (2026.01);
U.S. Cl.
CPC ...
H10D 30/6757 (2025.01); H10D 30/6729 (2025.01); H10D 86/00 (2025.01); H10D 86/01 (2025.01); H10D 30/673 (2025.01);
Abstract
A transistor includes a gate structure, a channel layer underlying the gate structure and comprising a two-dimensional (2D) material, source/drain contacts laterally spaced apart from the gate structure and disposed laterally next to the channel layer, and a spacer laterally interposed between the gate structure and the source/drain contacts. A semiconductor device and a semiconductor structure are also provided.