Hsinchu, Taiwan

Jui-Chien Huang

This inventor holds 42 USPTO granted patents and 36 published patent applications, primarily in Semiconductor Fabrication. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2015-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jui-Chien Huang. Retrieved from https://idiyas.com/inventor/jui-chien-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 42 

% Patents Active = 97.6

Average Co-Inventor Count = 5.8

ph-index = 3

Forward Citations = 41(Granted Patents)


Location History:

  • Hsinchu County, TW (2018)
  • Hsi-Chu, TW (2018)
  • Hsin-Chu, TW (2015 - 2024)

Company Filing History:


Years Active: 2015-2026

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Areas of Expertise:
Semiconductor Fabrication
FinFET Devices
Gate-All-Around Structure
Silicide Contacts
Nano-Sheet Devices
Dual Channel Transistors
Integrated Circuits
Wafer Processing
Self-Aligned Metal Gates
Epitaxial Growth
Nanostructure Devices
FET Technology
42 patents (USPTO):Explore Patents

Title: Innovations and Contributions of Jui-Chien Huang

Introduction

Jui-Chien Huang is a renowned inventor based in Hsinchu, Taiwan, recognized for his significant contributions to the field of semiconductor technology. With a remarkable portfolio comprising 31 patents, Huang has been instrumental in advancing semiconductor device fabrication techniques, particularly in the realm of gate-all-around structures.

Latest Patents

Huang's latest patents showcase his innovative approach to semiconductor device architecture. One notable patent, titled "Methods of fabricating semiconductor devices having gate-all-around structure with inner spacer last process," details a semiconductor device featuring multiple channel layers positioned over a semiconductor substrate. This invention integrates a source/drain structure that complements the plurality of channel layers and a unique gate structure encasing them. The inclusion of a first inner spacer, composed of a semiconductor material oxide, enhances the device's performance.

Another significant patent, "Dual channel gate all around transistor device and fabrication methods thereof," introduces a semiconductor structure that includes a fin on a substrate, featuring a channel region with a plurality of vertically stacked channels comprising germanium. This invention emphasizes the concentration gradient of germanium in the channel, showcasing Huang's ability to optimize semiconductor performance through meticulous design.

Career Highlights

Throughout his career, Jui-Chien Huang has worked with prominent companies in the semiconductor industry, including Taiwan Semiconductor Manufacturing Company Limited and Taiwan Semiconductor Manufacturing Comp. Ltd. His extensive experience in these leading firms has allowed him to refine his expertise in semiconductor technology and contribute to cutting-edge innovations.

Collaborations

Huang's journey in the semiconductor field is further enriched by collaborations with esteemed colleagues such as Chih-Hao Wang and Chun-Hsiung Lin. These partnerships have fostered a productive environment for innovation, enabling the development of advanced semiconductor solutions.

Conclusion

Jui-Chien Huang stands out as a pivotal figure in semiconductor innovation. His 31 patents, particularly his latest advancements in gate-all-around structures and dual channel devices, reflect his commitment to enhancing semiconductor technology. His contributions not only impact the industry but also pave the way for future innovations within the realm of electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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