The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2025
Filed:
Nov. 29, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Jui-Chien Huang, Hsinchu, TW;
Shih-Cheng Chen, New Taipei, TW;
Chih-Hao Wang, Hsinchu County, TW;
Kuo-Cheng Chiang, Hsinchu County, TW;
Zhi-Chang Lin, Hsinchu County, TW;
Jung-Hung Chang, Hsinchu, TW;
Lo-Heng Chang, Hsinchu, TW;
Shi Ning Ju, Hsinchu, TW;
Guan-Lin Chen, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 29/06 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 84/853 (2025.01); H10D 30/0245 (2025.01); H10D 30/6211 (2025.01); H10D 62/118 (2025.01); H10D 64/021 (2025.01); H10D 84/0128 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01);
Abstract
According to one example, a semiconductor device includes a substrate and a fin stack that includes a plurality of nanostructures, a gate device surrounding each of the nanostructures, and inner spacers along the gate device and between the nanostructures. A width of the inner spacers differs between different layers of the fin stack.