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Zhubei, Taiwan

Zhi-Chang Lin

This inventor holds 144 USPTO granted patents and 86 published patent applications, primarily in Semiconductor Devices (CPC class H01L29-66545). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2015-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zhi-Chang Lin. Retrieved from https://idiyas.com/inventor/zhi-chang-lin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 144 

% Patents Active = 99.3

Average Co-Inventor Count = 5.0

ph-index = 6

Forward Citations = 162(Granted Patents)

Forward Citations (Not Self Cited) = 83(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Zhubei, TW (2015 - 2024)
  • Hsinchu County, TW (2017 - 2024)
  • Hsinchu, TW (2022 - 2024)

Company Filing History:

goldMedal135 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal9 out of 481 
 
Taiwan Semiconductor Manufacturing Co., Ltd.
 patents

Years Active: 2015-2026

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Areas of Expertise:
Nanosheet Structures
FinFET Technology
Gate Capacitance
Dielectric Insulators
Multi-Gate Devices
Transistor Fabrication
Epitaxial Structures
Source/Drain Leakage
Backside Power Rail
Isolation Features
Channel Structures
Hybrid Fin
144 patents (USPTO):Explore Patents
1. 12727226 - Method for forming semiconductor structure (2026-09-01),
2. 12720838 - Field effect transistor with inner spacer liner layer and method (2026-08-25),
3. 12720823 - Transistor source/drain regions and methods of forming the same (2026-08-25),
4. 12666647 - Transistor including bottom isolation and manufacturing method thereof (2026-06-23),
5. 12635181 - Field effect transistor with multiple hybrid fin structure and method (2026-05-19),
6. 12628418 - Semiconductor device with selectively etched dielectric fins (2026-05-12),
7. 12588247 - Spacer structures for nano-sheet-based devices (2026-03-24),
8. 12557358 - Nanosheet semiconductor device and method for manufacturing the same (2026-02-17),
9. 12543352 - Integrated circuit with bottom dielectric insulators and fin sidewall spacers for reducing source/drain leakage currents (2026-02-03),
10. 12538570 - Reduction of gate-drain capacitance (2026-01-27),
11. 12538569 - Tuning tensile strain on FinFET (2026-01-27),
12. 12538511 - Semiconductor device and method fabricating the same (2026-01-27),
13. 12532505 - Semiconductor structure and method for forming the same (2026-01-20),
14. 12532492 - Structure and formation method of semiconductor device with epitaxial structures (2026-01-20),
15. 12520543 - Semiconductor device structure and method for forming the same (2026-01-06),

Title: The Innovative Journey of Zhi-Chang Lin

Introduction: Zhi-Chang Lin, a talented inventor hailing from Zhubei, Taiwan, has made significant contributions to the field of technology with his groundbreaking inventions.

Latest Patents: Zhi-Chang Lin holds several patents in the areas of electronics and renewable energy, showcasing his continuous commitment to innovation and progress in these fields.

Career Highlights: Throughout his illustrious career, Zhi-Chang Lin has been recognized for his pioneering work in developing sustainable energy solutions and cutting-edge electronic devices. His inventions have not only revolutionized the industry but have also positively impacted the lives of many.

Collaborations: Zhi-Chang Lin has collaborated with leading research institutions and technology companies to further advance his inventions and bring them to the market. His collaborative efforts have led to the successful implementation of his innovative ideas on a global scale.

Conclusion: Zhi-Chang Lin's passion for innovation and his dedication to creating a sustainable future through his inventions truly set him apart as a visionary inventor in the world of technology. His remarkable contributions continue to inspire and shape the landscape of the industry for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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