logo

For the Inventor, By the Inventor

Zhubei, Taiwan

Zhi-Chang Lin

USPTO Granted Patents = 125 

Average Co-Inventor Count = 5.1

ph-index = 5

Forward Citations = 127(Granted Patents)

Forward Citations (Not Self Cited) = 83(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Zhubei, TW (2015 - 2024)
  • Hsinchu County, TW (2017 - 2024)
  • Hsinchu, TW (2022 - 2024)

Company Filing History:

goldMedal125 out of 40,674 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2015-2025

Loading Chart...
Areas of Expertise:
Semiconductor Devices
Finfet Structures
Nanostructure Transistors
Gate All Around Transistors
Dielectric Liners
Multi-Gate Devices
Epitaxial Source/Drain Features
Backside Power Rail
Integrated Circuits
Liner Structures
Transistor Manufacturing
Latch-Up Prevention
125 patents (USPTO):Explore Patents
1. 12484295 - Method (and related apparatus) for forming a semiconductor device with reduced spacing between nanostructure field-effect transistors (2025-11-25),
2. 12484246 - Method of manufacturing a semiconductor device including forming a sidewall spacer on a sidewall of a channel structure (2025-11-25),
3. 12457798 - Dielectric liner for field effect transistors (2025-10-28),
4. 12453174 - Integrated circuits with finFET gate structures (2025-10-21),
5. 12453173 - Integrated circuits with gate cut features (2025-10-21),
6. 12446319 - Semiconductor device structure and methods of forming the same (2025-10-14),
7. 12446305 - Uniform gate width for nanostructure devices (2025-10-14),
8. 12439680 - Multi-gate device and related methods (2025-10-07),
9. 12438043 - Semiconductor structure with staggered selective growth (2025-10-07),
10. 12382710 - Method for forming long channel back-side power rail device (2025-08-05),
11. 12382666 - Enlargement of GAA nanostructure (2025-08-05),
12. 12363980 - Spacer structure for semiconductor device (2025-07-15),
13. 12349379 - Semiconductor devices and methods of manufacture (2025-07-01),
14. 12347775 - Semiconductor devices with backside power rail and methods of fabrication thereof (2025-07-01),
15. 12347690 - Method for metal gate cut and structure thereof (2025-07-01),

Title: The Innovative Journey of Zhi-Chang Lin

Introduction: Zhi-Chang Lin, a talented inventor hailing from Zhubei, Taiwan, has made significant contributions to the field of technology with his groundbreaking inventions.

Latest Patents: Zhi-Chang Lin holds several patents in the areas of electronics and renewable energy, showcasing his continuous commitment to innovation and progress in these fields.

Career Highlights: Throughout his illustrious career, Zhi-Chang Lin has been recognized for his pioneering work in developing sustainable energy solutions and cutting-edge electronic devices. His inventions have not only revolutionized the industry but have also positively impacted the lives of many.

Collaborations: Zhi-Chang Lin has collaborated with leading research institutions and technology companies to further advance his inventions and bring them to the market. His collaborative efforts have led to the successful implementation of his innovative ideas on a global scale.

Conclusion: Zhi-Chang Lin's passion for innovation and his dedication to creating a sustainable future through his inventions truly set him apart as a visionary inventor in the world of technology. His remarkable contributions continue to inspire and shape the landscape of the industry for years to come.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…