The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2026
Filed:
Dec. 10, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Jung-Hung Chang, Hsinchu, TW;
Zhi-Chang Lin, Hsinchu, TW;
Shih-Cheng Chen, Hsinchu, TW;
Chien Ning Yao, Hsinchu, TW;
Kuo-Cheng Chiang, Hsinchu, TW;
Chih-Hao Wang, Hsinchu, TW;
Chia-Pin Lin, Hsinchu, TW;
Wei-Yang Lee, Hsinchu, TW;
Yen-Sheng Lu, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
An integrated circuit includes a first nanostructure transistor and a second nanostructure transistor on a substrate. The source/drain regions of the first nanostructure are electrically isolated from the semiconductor substrate by bottom dielectric regions. The source/drain regions of the second nanostructure transistor in direct contact with the semiconductor substrate.