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For the Inventor, By the Inventor

Taipei, Taiwan

Shih-Cheng Chen

USPTO Granted Patents = 66 

Average Co-Inventor Count = 5.3

ph-index = 2

Forward Citations = 34(Granted Patents)

Forward Citations (Not Self Cited) = 19(Dec 10, 2025)


Location History:

  • Taipei, TW (2016 - 2024)
  • New Taipei, TW (2018 - 2024)
  • Hsinchu, TW (2024)

Company Filing History:

goldMedal66 out of 40,674 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2016-2025

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Areas of Expertise:
Semiconductor Devices
Field Effect Transistors
Gate All Around Transistor
Silicide Structures
Nanostructure Devices
Isolation Structures
Epitaxial Source Drain Features
Multi-Gate Device
Dielectric Liners
Latch-Up Prevention
Contact Structures
Hybrid Source Drain Regions
66 patents (USPTO):Explore Patents
1. 12484246 - Method of manufacturing a semiconductor device including forming a sidewall spacer on a sidewall of a channel structure (2025-11-25),
2. 12457798 - Dielectric liner for field effect transistors (2025-10-28),
3. 12446319 - Semiconductor device structure and methods of forming the same (2025-10-14),
4. 12446305 - Uniform gate width for nanostructure devices (2025-10-14),
5. 12439638 - FET with wrap-around silicide and fabrication methods thereof (2025-10-07),
6. 12412775 - Isolation structures in semiconductor devices (2025-09-09),
7. 12349379 - Semiconductor devices and methods of manufacture (2025-07-01),
8. 12347775 - Semiconductor devices with backside power rail and methods of fabrication thereof (2025-07-01),
9. 12342616 - Semiconductor device structure and methods of forming the same (2025-06-24),
10. 12342587 - Integrated circuit with nanostructure transistors and bottom dielectric insulators (2025-06-24),
11. 12336240 - Transistor including dielectric barrier and manufacturing method thereof (2025-06-17),
12. 12336226 - Semiconductor device structure including stacked nanostructures (2025-06-17),
13. 12317540 - Method for manufacturing semiconductor structure with isolation feature (2025-05-27),
14. 12300732 - Gate all around transistor with dual inner spacers (2025-05-13),
15. 12272732 - Method for forming epitaxial source/drain features and semiconductor devices fabricated thereof (2025-04-08),

Title: The Innovative Journey of Inventor Shih-Cheng Chen

Introduction: Shih-Cheng Chen, a pioneering inventor hailing from New Taipei, Taiwan, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Shih-Cheng Chen holds several patents in the areas of electronics and telecommunications, showcasing his continuous commitment to innovation and creativity in the industry.

Career Highlights: Throughout his illustrious career, Shih-Cheng Chen has been recognized for his inventive spirit and problem-solving skills, leading to the development of cutting-edge technologies that have revolutionized the way we interact with the world around us.

Collaborations: Shih-Cheng Chen has collaborated with leading research institutions and technology companies to further his inventions and bring them to the market, solidifying his reputation as a visionary inventor in the field.

Conclusion: In conclusion, Shih-Cheng Chen's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of inventions, inspiring future generations to push the boundaries of what is possible in the realm of technology.

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